N-Channel Enhancement Mode Field Effect Transistor Features VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A
N-Channel Enhancement Mode Field Effect Transistor Features VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A
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