Phase Control Thyristor

5STP 38N4200

VDRM = 4200 V

IT(A V)M = 4090 A

IT(RMS) = 6420 A

ITSM = 64.5­103 A

VT0 = 0.973 V

rT = 0.126 mΩ

· Patented free-floating silicon technology

·Low on-state and switching losses

·Designed for traction, energy and industrial applications

·Optimum power handling capability

· Interdigitated amplifying gate