GDDR7 Memory Test System

M5512 GDDR7 Memory Test System

ATE-on-Bench for GDDR7 Characterization and Test

BENEFITS

Fastest time to market: perform deep memory read/write operations and characterize electrical and timing specifications

Most capable PAM3 signaling: leveraging years of expertise in SerDes technology, the PAM3 pin-electronics exceed the requirements of the GDDR7 specifications

Automated: scripting capability ideal for debug tasks, verification, and full‐fledged production screening of devices and system boards

M5512 GDDR7內(nèi)存測(cè)試系統(tǒng)

用于GDDR7表征和測(cè)試的臺(tái)架ATE

利益

最快上市時(shí)間：執(zhí)行深度內(nèi)存讀/寫操作，并確定電氣和時(shí)序規(guī)格

最強(qiáng)大的PAM3信號(hào)：利用SerDes技術(shù)多年的專業(yè)知識(shí)，PAM3引腳電子器件超過了GDDR7規(guī)范的要求

自動(dòng)化：腳本功能非常適合調(diào)試任務(wù)、驗(yàn)證以及設(shè)備和系統(tǒng)板的全面生產(chǎn)篩選